DocumentCode :
2465164
Title :
Stochastic modeling of film porosity in thin film deposition
Author :
Hu, Gangshi ; Orkoulas, Gerassimos ; Christofides, Panagiotis D.
Author_Institution :
Dept. of Chem. & Biomol. Eng., Univ. of California, Los Angeles, CA, USA
fYear :
2009
fDate :
10-12 June 2009
Firstpage :
4771
Lastpage :
4778
Abstract :
This work focuses on modeling of film porosity in thin film deposition using stochastic differential equations. A deposition process is modeled via kinetic Monte Carlo (kMC) simulation on a triangular lattice. The microscopic process events involve atom adsorption and migration and the film growth allows for vacancies and overhangs to develop inside the film. Appropriate definitions of film site occupancy ratio (SOR), i.e., fraction of film sites occupied by particles over total number of film sites, and its fluctuation are introduced to describe film porosity. Deterministic and stochastic ordinary differential equation (ODE) models are also derived to describe the time evolution of film SOR and its fluctuation. The coefficients of the ODE models are estimated on the basis of data obtained from the kMC simulator of the deposition process using least-square methods. Simulation results demonstrate the applicability and effectiveness of the proposed film porosity modeling methods in the context of the deposition process under consideration.
Keywords :
Monte Carlo methods; copper; differential equations; elemental semiconductors; metallic epitaxial layers; molecular beam epitaxial growth; porosity; porous materials; porous semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; stochastic processes; vacancies (crystal); Cu; Si; atom adsorption; kinetic Monte Carlo simulation; migration; molecular beam epitaxial growth; ordinary differential equation; porosity; site occupancy ratio; stochastic differential equations; stochastic modeling; thin film deposition; triangular lattice; vacancies; Atomic layer deposition; Context modeling; Differential equations; Fluctuations; Kinetic theory; Lattices; Microscopy; Monte Carlo methods; Sputtering; Stochastic processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
American Control Conference, 2009. ACC '09.
Conference_Location :
St. Louis, MO
ISSN :
0743-1619
Print_ISBN :
978-1-4244-4523-3
Electronic_ISBN :
0743-1619
Type :
conf
DOI :
10.1109/ACC.2009.5160138
Filename :
5160138
Link To Document :
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