Title :
Nanocrystalline SiGe films: structure and properties
Author :
Edelman, Felix ; Komem, Yigal ; Stölze, Mathias ; Werne, Peter ; Butz, Rainer
Author_Institution :
Mater. Eng. Fac., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
April 29 1996-May 3 1996
Abstract :
Amorphous (a) Si1-xGex films with x=0.27-0.55 about 200-300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO2/Si(001) substrates at room temperature. For crystallization at 600 to 900°C a- Si1-xGex/SiO2/Si samples were annealed in vacuum at 10-6Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si1-xGe x films with grain size of about 5-20 nm which is 100 times smaller than undoped films. The nanocrystalline Si1-xGex films showed a high hole mobility (1 to 100 cm2/Vs) and Seebeck coefficient values (5 to 110 μV/K)
Keywords :
Ge-Si alloys; Seebeck effect; X-ray diffraction; annealing; gallium; grain size; heavily doped semiconductors; hole mobility; nanostructured materials; semiconductor thin films; transmission electron microscopy; vacuum deposited coatings; 200 to 300 nm; 293 K; 600 to 900 degC; Seebeck coefficient; Si; SiGe:Ga; SiO/sub 2/; X-ray diffraction; grain size; highly Ga doped films; hole mobility; in situ TEM; molecular-beam deposition; nanocrystalline SiGe films; nanocrystalline structure; Amorphous materials; Annealing; Crystallization; Germanium silicon alloys; Grain size; Nanostructures; Semiconductor films; Silicon germanium; Temperature; X-ray diffraction;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse, France
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570940
