Transient thermal analysis of power devices based on Fourier-series thermal model

Author

Du, B. ; Hudgins, J.L. ; Santi, E. ; Bryant, A.T. ; Palmer, P.R. ; Mantooth, H.A.

Author_Institution

Dept. of Electr. Eng., Univ. of Nebraska, Lincoln, NE

fYear

2008

fDate

15-19 June 2008

Firstpage

3129

Lastpage

3135

Abstract

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600 V 50 A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module.

Keywords

Fourier series; finite difference methods; power semiconductor devices; semiconductor device models; thermal analysis; transient analysis; Fourier series expansion method; Fourier-series thermal model; IGBT; MATLAB; SIMULINK; current 50 A; finite difference model; physics-based electrical model; power devices; thermal measurement; transient thermal analysis; voltage 600 V; Finite difference methods; Fourier series; Frequency; Insulated gate bipolar transistors; MATLAB; Mathematical model; Temperature; Thermal expansion; Thermal loading; Transient analysis; Fourier-series thermal models; electro-thermal simulation; packaging; transient thermal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2008. PESC 2008. IEEE

Conference_Location

Rhodes

ISSN

0275-9306

Print_ISBN

978-1-4244-1667-7

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2008.4592433

Filename

4592433