Title :
Heteroepitaxy of Ge-Si1-xGex superlattices on Si (100) substrates by GeH4-Si MBE
Author :
Orlov, L.K. ; Tolomasov, V.A. ; Potapov, A.V. ; Drozdov, Yu N. ; Vdovin, V.I.
Author_Institution :
Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia
fDate :
29 Apr-3 May 1996
Abstract :
We applied GeH4-Si MBE for growing Ge-Si1-xGex superlattices on Si(100). We investigated the distribution and the structure of defects inside heteroepitaxial Si1-xGex layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer
Keywords :
Ge-Si alloys; dislocation structure; elemental semiconductors; germanium; molecular beam epitaxial growth; plastic deformation; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; Ge-SiGe; GeH4-Si MBE; Si; Si(100) substrates; defect distribution; defect structure; dislocation structure; heteroepitaxial layers; plastic deformation; superlattices; Atomic layer deposition; Crystallization; Epitaxial growth; Metallic superlattices; Molecular beam epitaxial growth; Quantum well devices; Semiconductor process modeling; Solids; Substrates; Temperature dependence;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570942
