A numerical simulation study of a nanoscaled side selective buried oxide MOSFET

Author

Loan, Sajad A. ; Qureshi, S. ; Iyer, S. Sunder Kumar

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Two dimensional numerical simulation of nanoscaled selective buried oxide (SELBOX) based MOSFET is performed. In this device an opening is provided under the device channel in the buried oxide (BOX). A comparative analysis of the SELBOX, bulk and SOI (Silicon-on-Insulator) devices for various performance measuring parameters has been done. The simulation study has revealed that by properly choosing various device parameters, the overall performance of the SELBOX device is found to be optimal to that of the conventional MOSFET and SOI device, particularly when self heating, short channel effects and breakdown voltage are considered together.

Keywords

MOSFET; semiconductor device breakdown; silicon-on-insulator; SELBOX device; SOI devices; breakdown voltage; comparative analysis; nanoscaled selective buried oxide MOSFET; self heating; short channel effects; silicon-on-Insulator devices; two dimensional numerical simulation; Analytical models; Heating; Leakage current; MOSFET circuits; Nanoscale devices; Numerical simulation; Silicon on insulator technology; Temperature; Thermal degradation; Threshold voltage; SOI; buried oxide; ion implantation; subthreshold slope; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760640

Filename

4760640