Towards an airborne high temperature SiC inverter

Author

Bergogne, Dominique ; Morel, Hervé ; Planson, Dominique ; Tournier, Dominique ; Bevilacqua, Pascal ; Allard, Bruno ; Meuret, Régis ; Vieillard, Sébastien ; Raël, Stéphane ; MeibodyTabar, Farid

Author_Institution

Ampere-Lab., Villeurbanne

fYear

2008

fDate

15-19 June 2008

Firstpage

3178

Lastpage

3183

Abstract

SiC devices enable for high temperature operation of power converters. The paper describes the laboratory step by step work towards an airborne high temperature inverter : 200C cooling source, 4 kVA power. From ´JFET only´ to ´full three phase power stage´ tested up to 250C, including capacitor. Device samples are characterized in order to set the requirements for the gate driver and to evaluate maximum switchable power. Switching losses are measured using high precision shunt and voltage probes. A prototype is built and operation under full load (15A) is verified.

Keywords

avionics; invertors; power convertors; silicon compounds; SiC; SiC devices; airborne high temperature SiC inverter; gate driver; high temperature operation; power converters; switching losses; temperature 200 C; Capacitors; Cooling; Inverters; Laboratories; Loss measurement; Silicon carbide; Switching loss; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2008. PESC 2008. IEEE

Conference_Location

Rhodes

ISSN

0275-9306

Print_ISBN

978-1-4244-1667-7

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2008.4592442

Filename

4592442