Title :
Towards an airborne high temperature SiC inverter
Author :
Bergogne, Dominique ; Morel, Hervé ; Planson, Dominique ; Tournier, Dominique ; Bevilacqua, Pascal ; Allard, Bruno ; Meuret, Régis ; Vieillard, Sébastien ; Raël, Stéphane ; MeibodyTabar, Farid
Author_Institution :
Ampere-Lab., Villeurbanne
Abstract :
SiC devices enable for high temperature operation of power converters. The paper describes the laboratory step by step work towards an airborne high temperature inverter : 200C cooling source, 4 kVA power. From ´JFET only´ to ´full three phase power stage´ tested up to 250C, including capacitor. Device samples are characterized in order to set the requirements for the gate driver and to evaluate maximum switchable power. Switching losses are measured using high precision shunt and voltage probes. A prototype is built and operation under full load (15A) is verified.
Keywords :
avionics; invertors; power convertors; silicon compounds; SiC; SiC devices; airborne high temperature SiC inverter; gate driver; high temperature operation; power converters; switching losses; temperature 200 C; Capacitors; Cooling; Inverters; Laboratories; Loss measurement; Silicon carbide; Switching loss; Temperature; Testing; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2008. PESC 2008. IEEE
Conference_Location :
Rhodes
Print_ISBN :
978-1-4244-1667-7
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2008.4592442
