Title :
Multifractal behavior of the power dissipation of CMOS circuits
Author :
Qiang, W. ; Cao, H.
Author_Institution :
Sch. of Comput., China Univ. of Geosci., Wuhan
Abstract :
Power dissipations of complementary metal-oxide-semiconductor (CMOS) circuits under randomly generated input vector streams are found to characterize the multifractality. The multifractal behaviors have been demonstrated by box-counting method on ISCAS-85 benchmark circuits with various scales and under different average power dissipations. The range of the scaling invariance spans nearly four decades. The self-affine generalized fractal dimensions and the multifractal spectra are presented. The generalized fractal dimensions decrease with the increasing moment orders. The multifractal spectra are concave downward with maximums at the moment order of zero. The average power dissipations and the scales of the circuits are related to the range of singularity by power laws.
Keywords :
CMOS integrated circuits; fractals; ISCAS-85 benchmark circuits; box-counting method; complementary metal-oxide-semiconductor circuits; multifractal property; multifractal spectra; power dissipation; power laws; self-affine generalized fractal dimensions; CMOS logic circuits; Capacitance; Circuit simulation; Clocks; Fractals; Geology; Integrated circuit reliability; Power dissipation; Power system reliability; Very large scale integration;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760642
