Multifractal behavior of the power dissipation of CMOS circuits

Author

Qiang, W. ; Cao, H.

Author_Institution

Sch. of Comput., China Univ. of Geosci., Wuhan

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Power dissipations of complementary metal-oxide-semiconductor (CMOS) circuits under randomly generated input vector streams are found to characterize the multifractality. The multifractal behaviors have been demonstrated by box-counting method on ISCAS-85 benchmark circuits with various scales and under different average power dissipations. The range of the scaling invariance spans nearly four decades. The self-affine generalized fractal dimensions and the multifractal spectra are presented. The generalized fractal dimensions decrease with the increasing moment orders. The multifractal spectra are concave downward with maximums at the moment order of zero. The average power dissipations and the scales of the circuits are related to the range of singularity by power laws.

Keywords

CMOS integrated circuits; fractals; ISCAS-85 benchmark circuits; box-counting method; complementary metal-oxide-semiconductor circuits; multifractal property; multifractal spectra; power dissipation; power laws; self-affine generalized fractal dimensions; CMOS logic circuits; Capacitance; Circuit simulation; Clocks; Fractals; Geology; Integrated circuit reliability; Power dissipation; Power system reliability; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760642

Filename

4760642