High sensitivity pH sensor using AlXGa1-XN/GaN HEMT heterostructure design

Author

Huang, Hsin-Shun ; Lin, Chao-Wei ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al_0.3Ga_0.7N has the excellent performance among Al_0.17Ga_0.83N and Al_0.25Ga_0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al_0.3Ga_0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.

Keywords

III-V semiconductors; aluminium compounds; biochemistry; biomedical electronics; biomedical measurement; biosensors; chemical sensors; diseases; gallium compounds; high electron mobility transistors; ion sensitive field effect transistors; pH measurement; wide band gap semiconductors; Al_0.3Ga_0.7N-GaN; HEMT heterostructure design; biosensor; disease detection; gate oxide; gateless high-electron mobility transistors; high-sensitivity pH sensor; Aluminum gallium nitride; Biomedical equipment; Biosensors; Blood; Diseases; Gallium nitride; HEMTs; MODFETs; Photonic band gap; Piezoelectric polarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760643

Filename

4760643