Title :
High sensitivity pH sensor using AlXGa1-XN/GaN HEMT heterostructure design
Author :
Huang, Hsin-Shun ; Lin, Chao-Wei ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan
Abstract :
Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al0.3Ga0.7N has the excellent performance among Al0.17Ga0.83N and Al0.25Ga0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al0.3Ga0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.
Keywords :
III-V semiconductors; aluminium compounds; biochemistry; biomedical electronics; biomedical measurement; biosensors; chemical sensors; diseases; gallium compounds; high electron mobility transistors; ion sensitive field effect transistors; pH measurement; wide band gap semiconductors; Al0.3Ga0.7N-GaN; HEMT heterostructure design; biosensor; disease detection; gate oxide; gateless high-electron mobility transistors; high-sensitivity pH sensor; Aluminum gallium nitride; Biomedical equipment; Biosensors; Blood; Diseases; Gallium nitride; HEMTs; MODFETs; Photonic band gap; Piezoelectric polarization;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760643
