Title :
The simulation and measurement of the temperature rise in a power semiconductor device under transient conditions
Author :
Thomas, K.P. ; Webb, P.W.
Author_Institution :
Smiths Ind. Aerosp. Ltd., Birmingham, UK
Abstract :
This paper first examines the method widely used by semiconductor manufacturers to generate the transient thermal response curves. It then goes on to examine the validity of such curves by means of measuring the die temperature rise under pulsed power conditions using an infrared camera and by generating a comprehensive thermal model of the semiconductor device and package. The results are finally presented and conclusions are made
Keywords :
power semiconductor devices; die temperature rise; infrared camera; measurement; package; pulsed power semiconductor device; simulation; thermal model; transient thermal response curve;
Conference_Titel :
Modelling and Simulation for Thermal Management (Digest No. 1997/043), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19970270
