DocumentCode :
2465791
Title :
Investigation of problems in JEDEC HBM ESD test standard
Author :
Huo, Mingxu ; Han, Yan ; Liu, Qi ; Song, Bo ; Ma, Qingrong ; Zhu, Kehan ; Shen, Yehui ; Du, Xiaoyang ; Dong, Shurong
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou
fYear :
2008
fDate :
8-10 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Sufficient emphasis need be applied to current EIA/JEDEC Human-Body Model (HBM) Electrostatic Discharge (ESD) test standard, which does not define the start and step test voltages. Some measurement begins from several kilo-volts, which makes it ignored that ESD protection devices might fail under low voltage stresses. A Gate-Grounded NMOS (GGNMOS) structure with an NWell-ballast resistor connecting its drain and PAD is investigated for HBM ESD sustaining levels in this paper. When tested with a Zapmaster of HBM model starting from 1 kilo-volt, the withstand voltage exceeds 8 kilo-volts, whereas the structure failed at 350 volts when the test initiates from 50 volts. The test results from a Transmission-Line Pulsing (TLP) system validate the phenomenon. The reason of the failure is also analyzed and proved with OBIRCH Failure Analysis (FA) results. To overcome this general issue, a suggestion for improving present HBM ESD testing standards for industry application is proposed.
Keywords :
MOS integrated circuits; electrostatic discharge; failure analysis; ESD protection devices; JEDEC HBM ESD test standard; NWell-ballast resistor; OBIRCH failure analysis; electrostatic discharge test standard; gate-grounded NMOS structure; human-body model; low voltage stresses; transmission-line pulsing system; Electrostatic discharge; Electrostatic measurements; Failure analysis; Joining processes; Low voltage; MOS devices; Protection; Resistors; Stress measurement; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
Type :
conf
DOI :
10.1109/EDSSC.2008.4760646
Filename :
4760646
Link To Document :
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