Title :
A 155-GHz monolithic InP-based HEMT amplifier
Author :
Wang, H. ; Lai, R. ; Chen, Y.C. ; Kok, Y.L. ; Huang, T.W. ; Block, T. ; Streit, D. ; Liu, P.H. ; Siegel, P. ; Allen, B.
Author_Institution :
TRW Space & Electron. Group, Redondo Beach, CA, USA
Abstract :
This paper presents the development, of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1-/spl mu/m pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 153-155 GHz, and more than 10-dB gain from 151 to 156 GHz. This is the highest frequency amplifier ever reported using three terminal devices.
Keywords :
HEMT integrated circuits; field effect MIMIC; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 12 dB; 151 to 156 GHz; HEMT amplifier; InAlAs-InGaAs-InP; low noise amplifier; millimetre-wave amplifiers; pseudomorphic HEMT technology; small signal gain; three terminal devices; Frequency; Gain measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Performance gain; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596559
