Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides

Author

Molina, J. ; De La Hidalga, F.J. ; Rosales, P. ; Kakushima, K. ; Ahmet, P. ; Tsutsui, K. ; Sugii, N. ; Hattori, T. ; Iwai, H.

Author_Institution

Dept. of Electron., Nat. Inst. of Astrophys., Puebla

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, we report and compare the reliability results obtained for W-La₂O₃ gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO₂-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (DeltaVth) and time to breakdown (t_bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown.

Keywords

MIS devices; dielectric thin films; hafnium compounds; interface states; lanthanum compounds; leakage currents; semiconductor device breakdown; semiconductor device reliability; tungsten; HfO₂; W-La₂O₃; electrical breakdown; electrical degradation; gated metal-oxide-semiconductor devices; interface-states generation; reliability; resistance; stress-induced leakage current; threshold voltage shift; Annealing; Degradation; Dielectric breakdown; Dielectric substrates; Electric variables; Hafnium oxide; High K dielectric materials; Leakage current; MOS devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760658

Filename

4760658