Terahert detection analysis of nanowire gated field effect transistor

Author

Chen, Yu ; He, Jin ; Mu, Xuehao ; Lou, Haijun ; Zhang, Lining ; Song, Yan

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

An analytical terahertz (THz) detection model of the Silicon nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.

Keywords

MOSFET; charge exchange; nanowires; plasma transport processes; submillimetre wave detectors; Si; hydrodynamic transport equations; inversion charge transport; nanowire gated field effect transistor; photoresponse; plasma wave transport behavior; silicon nanowire MOSFET; terahert detection analysis; velocity spatial distribution; Analytical models; Electrons; Equations; FETs; Helium; Hydrodynamics; Plasma waves; Radiation detectors; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760659

Filename

4760659