DocumentCode
2466186
Title
Low power wireless receiver in CMOS mixed-signal for bio-telemetry implantable system
Author
Hongge, L.I. ; Youguang Zhang
Author_Institution
Dept. of Electron., Beijing Univ., Beijing
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
A novel mixed-signal interlace is presented for implantable interlace receiver consists of an analog front-end and a digital processing circuit. The analog circuit consists of mainly an amplifier, an ASK demodulator, a clock extraction and a power recovery. In this paper, the amplifier and the ASK demodulator are described and provided without the capacitor and the resistor, fully integrated, low-power circuit. We also developed the processing circuit with the digital technology, so that implementing the correct synchronous signal. The carrier frequency of the circuit is applied in the 10 MHz range, the data rates up to IM bits are supported, suitable for complex implantable microsystem such as the brain neural mutual interface and so on. Low-power and high-performance implantable interface using a CMOS technology has been designed, fabricated and verified. All of circuits were implemented in a standard 0.18-mum CMOS technology. The power dissipation of the mixed-signal micros stem is verified to be less than 2.75 mW @ 1.8 V.
Keywords
CMOS analogue integrated circuits; CMOS digital integrated circuits; biomedical telemetry; brain; demodulators; low-power electronics; neurophysiology; prosthetics; ASK demodulator; CMOS mixed-signal system; analog front-end; biotelemetry implantable system; brain neural mutual interface; clock extraction; complex implantable microsystem; data rates; digital processing circuit; digital technology; fully integrated low-power circuit; implantable interlace receiver; low power wireless receiver; mixed-signal interlace; power recovery; processing circuit; Amplitude shift keying; Analog circuits; CMOS technology; Capacitors; Clocks; Demodulation; Integrated circuit technology; Power amplifiers; Resistors; Signal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760665
Filename
4760665
Link To Document