DocumentCode :
2466212
Title :
An efficiency-enhanced low dropout Linear HB LED driver for automotive application
Author :
Ying-yan, Lin ; Jing, Zhang ; Xue-cheng, Zou ; Wei, Li
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
fYear :
2008
fDate :
8-10 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
An efficiency-enhanced linear LED driver, which operates with a wide input voltage range (6.3 V~32 V) and is able to provide output current up to 350 mA with accuracy of plusmn3%, is presented in this paper. To improve driving efficiency, an operational amplifier is exploited to lower current-sense voltage while PMOS pass element with elaborate metal layout pattern is used to reduce dropout loss. Besides, a 5 V regulated voltage is obtained from the wide range input voltage to supply some modules in the driver so as to further diminish power dissipation of the driver. The proposed driver has been fabricated on a 0.5 mum BCD process occupying 1.4 mm times 1.8 mm area. Post-simulation results show that the proposed scheme driving three HB-LEDs in series can achieve the maximum efficiency of 91.04% at ILOAD=350 mA, which is enhanced by 7.2% compared with that of the typical linear LED driver under the same condition. The dropout voltage is 450 mV when the load current is 350 mA. Besides, it is able to recover within 99 mus.
Keywords :
MOS integrated circuits; automotive electronics; driver circuits; light emitting diodes; PMOS pass element; automotive application; current 350 mA; driver circuit; driving efficiency; dropout loss; efficiency-enhanced linear LED; high-brightness LED; low dropout LED; operational amplifier; size 0.5 mum; size 1.44 mm; size 1.8 mm; time 99 mus; voltage 450 mV; voltage 6.3 V to 32 V; Automotive applications; Channel bank filters; Driver circuits; Error correction; Light emitting diodes; Operational amplifiers; Power amplifiers; Power dissipation; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
Type :
conf
DOI :
10.1109/EDSSC.2008.4760666
Filename :
4760666
Link To Document :
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