• DocumentCode
    2466315
  • Title

    High frequency low cost CMOS LNA design procedure for the wireless industry

  • Author

    Ahmed, Abdulhakim ; Wight, Jim

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, ON
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a design procedure used in industry for designing low-power narrowband high-gain CMOS LNAs for wireless applications for frequencies greater than 6 GHz, with considerations for process variations. This paper does not give detailed derivations of equations. Rather, it gives the simulation procedure and methodology that converges quickly to a practical optimized solution for LNA designs mostly used in mobile communication industry for mass-production, requiring minimal time and resources from the designer. It takes a wholistic design approach where all factors, including manufacturing costs, technology choice and applications are considered. It explains how to design the appropriate topology from the ldquogrounds uprdquo approach, and then giving the designer the option to match the ports or not, depending on if it is appropriate. This method yields these LNA parameters at 6.5 GHz: S21=18 dB, NFmin=3.22 dB, NF=6.1 dB and S22,<-15 dB with only 6.4 mW (plus 2.5 mW for narrowband output match) power consumption over 1.2 V supply.
  • Keywords
    CMOS analogue integrated circuits; field effect MMIC; low noise amplifiers; low-power electronics; mass production; mobile communication; CMOS LNA design procedure; frequency 6.5 GHz; low-power electronics; manufacturing costs; mass production; mobile communication industry; noise figure 6.1 dB; power 6.4 mW; voltage 1.2 V; wireless applications; wireless industry; CMOS process; Communication industry; Costs; Design optimization; Equations; Frequency; Manufacturing industries; Mobile communication; Narrowband; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760669
  • Filename
    4760669