Title :
High frequency low cost CMOS LNA design procedure for the wireless industry
Author :
Ahmed, Abdulhakim ; Wight, Jim
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON
Abstract :
This paper presents a design procedure used in industry for designing low-power narrowband high-gain CMOS LNAs for wireless applications for frequencies greater than 6 GHz, with considerations for process variations. This paper does not give detailed derivations of equations. Rather, it gives the simulation procedure and methodology that converges quickly to a practical optimized solution for LNA designs mostly used in mobile communication industry for mass-production, requiring minimal time and resources from the designer. It takes a wholistic design approach where all factors, including manufacturing costs, technology choice and applications are considered. It explains how to design the appropriate topology from the ldquogrounds uprdquo approach, and then giving the designer the option to match the ports or not, depending on if it is appropriate. This method yields these LNA parameters at 6.5 GHz: S21=18 dB, NFmin=3.22 dB, NF=6.1 dB and S22,<-15 dB with only 6.4 mW (plus 2.5 mW for narrowband output match) power consumption over 1.2 V supply.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; low noise amplifiers; low-power electronics; mass production; mobile communication; CMOS LNA design procedure; frequency 6.5 GHz; low-power electronics; manufacturing costs; mass production; mobile communication industry; noise figure 6.1 dB; power 6.4 mW; voltage 1.2 V; wireless applications; wireless industry; CMOS process; Communication industry; Costs; Design optimization; Equations; Frequency; Manufacturing industries; Mobile communication; Narrowband; Topology;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760669