DocumentCode :
2466374
Title :
Comparison of top and bottom-contact organic thin film transistors for analog circuit applications
Author :
Islam, M.N. ; Mazhari, B.
Author_Institution :
Dept. of Electr. Eng. & Samtel Center for Display Technol., Indian Inst. of Technol. Kanpur, Kanpur
fYear :
2008
fDate :
8-10 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
A comparative analysis of top and bottom-contact organic thin film transistors (OTFTs) for analog circuit applications is presented using a common source amplifier as an example. Using 2D numerical device simulations, it is shown that significantly higher product of voltage gain and 3dB bandwidth can be obtained using a top-contact OTFT. This advantage results primarily from a smaller gate-drain capacitance and increases in amplifiers designed for higher voltage gain.
Keywords :
amplifiers; analogue circuits; capacitance; organic field effect transistors; thin film transistors; OTFT; analog circuit; bottom-contact organic thin film transistors; common source amplifier; gate-drain capacitance; top-contact organic thin film transistors; voltage gain; Analog circuits; Bandwidth; Insulation; Numerical simulation; Organic semiconductors; Organic thin film transistors; Semiconductor films; Thin film transistors; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
Type :
conf
DOI :
10.1109/EDSSC.2008.4760672
Filename :
4760672
Link To Document :
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