Comparison of top and bottom-contact organic thin film transistors for analog circuit applications

Author

Islam, M.N. ; Mazhari, B.

Author_Institution

Dept. of Electr. Eng. & Samtel Center for Display Technol., Indian Inst. of Technol. Kanpur, Kanpur

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A comparative analysis of top and bottom-contact organic thin film transistors (OTFTs) for analog circuit applications is presented using a common source amplifier as an example. Using 2D numerical device simulations, it is shown that significantly higher product of voltage gain and 3dB bandwidth can be obtained using a top-contact OTFT. This advantage results primarily from a smaller gate-drain capacitance and increases in amplifiers designed for higher voltage gain.

Keywords

amplifiers; analogue circuits; capacitance; organic field effect transistors; thin film transistors; OTFT; analog circuit; bottom-contact organic thin film transistors; common source amplifier; gate-drain capacitance; top-contact organic thin film transistors; voltage gain; Analog circuits; Bandwidth; Insulation; Numerical simulation; Organic semiconductors; Organic thin film transistors; Semiconductor films; Thin film transistors; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760672

Filename

4760672