Modeling and simulation of power trench MOSFET with SiGeC-based channel

Author

Wang, Ying ; Hu, Hai-Fan ; Cheng, Chao

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The improved device characteristics by incorporating carbon atoms in SiGe-channel is simulated and analyzed. Compared with SiGe-channel UMOSFET, the structure has not only lower on-state resistance but also better thermal stability. The dependence of device characteristics on the critical thickness of SiGeC-channel is also studied. The simulated results show that the critical thickness is reduced largely because of adding carbon atoms to SiGe-channel. It indicates that SiGeC alloy is a promising channel material for power trench MOSFET application.

Keywords

Ge-Si alloys; power MOSFET; semiconductor device models; semiconductor materials; thermal stability; SiGe; SiGeC-channel critical thickness; modeling; power trench MOSFET; simulation; thermal stability; Analytical models; Atomic layer deposition; Boron; Geometry; Germanium silicon alloys; MOSFET circuits; Optoelectronic devices; Power MOSFET; Semiconductor materials; Silicon germanium; SiGeC alloys; channel; power device; simulation; trench MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760673

Filename

4760673