DocumentCode :
2466586
Title :
Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers
Author :
Pospieszalski, M.W. ; Lakatosh, W.J. ; Wollack, E. ; Nguyen, L.D. ; Minh Le ; Lui, M. ; Takyiu Liu
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Volume :
3
fYear :
1997
fDate :
8-13 June 1997
Firstpage :
1285
Abstract :
The design, construction and performance of 65-90 GHz and 75-110 GHz low-noise cryogenically-coolable amplifiers are presented. A comparison between modeled and measured performance is shown. A laboratory receiver exhibiting an average noise of 50 K across 65-90 GHz and 70 K across 75-110 GHz is described. These are the widest band and lowest noise HEMT receivers ever reported at these frequencies.
Keywords :
HEMT circuits; III-V semiconductors; cryogenic electronics; indium compounds; millimetre wave amplifiers; millimetre wave receivers; wideband amplifiers; 65 to 90 GHz; 75 to 110 GHz; InP; InP HEMT amplifier; cryogenic cooling; low-noise amplifier; millimeter-wave waveguide-bandwidth; receiver; Circuit noise; Couplings; Cryogenics; HEMTs; Indium phosphide; Low-noise amplifiers; Millimeter wave technology; Observatories; Radio astronomy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3814-6
Type :
conf
DOI :
10.1109/MWSYM.1997.596562
Filename :
596562
Link To Document :
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