DocumentCode
2467178
Title
Noncontact Observation of Microdefects in N-GaAs Wafers by Photo-Thermal-Radiation and Photoluminescence Microscopy
Author
Mikoshiba, N. ; Akutsu, Y. ; Nakamura, H. ; Tsubouchi, K. ; Hosokawa, M.
fYear
1986
fDate
17-19 Nov. 1986
Firstpage
481
Lastpage
486
Keywords
Annealing; Gallium arsenide; Infrared detectors; Microscopy; Mirrors; Photoluminescence; Pulse measurements; Radiation detectors; Surface emitting lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE 1986 Ultrasonics Symposium
Conference_Location
Williamsburg, VA, USA
Type
conf
DOI
10.1109/ULTSYM.1986.198786
Filename
1535726
Link To Document