High-efficiency, small-chip AlGaAs/GaAs power HBTs for low-voltage digital cellular phones

Author

Hayama, N. ; Kim, C.-W. ; Takahashi, H. ; Goto, N. ; Honjo, K.

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1307

Abstract

A 61% power added efficiency (PAE), high linearity AlGaAs/GaAs power HBT with a very small chip size of 0.58/spl times/0.77 mm for use in personal digital cellular phones (PDC) is described. The device layout is optimized to reduce thermal resistance while maintaining a compact chip size. This power HBT, which has 60 fingers of 2/spl times/30 /spl mu/m emitter, exhibited 31.4 dBm output power and 61% power added efficiency with -51.7 dBc adjacent channel leakage power at a 50 kHz offset frequency under 1.5 GHz /spl pi//4-shifted QPSK modulation when operated at a low collector-emitter voltage of 3.4 V. These results satisfy Japan´s PDC standard in a chip area that is less than 20% of that needed for a conventional GaAs power MESFET.

Keywords

III-V semiconductors; aluminium compounds; cellular radio; digital radio; gallium arsenide; heterojunction bipolar transistors; land mobile radio; power bipolar transistors; /spl pi//4-shifted QPSK modulation; 1.5 GHz; 3.4 V; 61 percent; AlGaAs-GaAs; AlGaAs/GaAs power HBT; Japan PDC standard; adjacent channel leakage power; chip area; linearity; low-voltage personal digital cellular phone; multi-finger structure; output power; power added efficiency; thermal resistance; Cellular phones; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Low voltage; Power generation; Quadrature phase shift keying; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596567

Filename

596567