Title :
A 1.9 GHz variable gain linear power amplifier MMIC for PHS using novel cascaded MESFETs
Author :
Kimishima, M. ; Hayashi, K. ; Takahashi, M.
Author_Institution :
New Japan Radio Co. Ltd., Saitama, Japan
Abstract :
A GaAs power amplifier MMIC for 1.9 GHz Japanese digital cordless phone has been developed using novel cascaded MESFETs. The MMIC exhibits a gain of 32 dB, a power added efficiency of 37% at P-1 dB of 23.6 dBm, -64 dBc adjacent channel leakage power (ACP) at 600 kHz offset with 21 dBm output, and an operating voltage of 3 V. In addition, the ACP of less than -57 dBc is obtained at gain control of 0 dB to -14 dB remaining an output power of 21 dBm.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; cascade networks; cordless telephone systems; field effect MMIC; gallium arsenide; power amplifiers; telephone sets; 1.9 GHz; 3 V; 32 dB; 37 percent; GaAs; Japanese digital cordless phone; PHS; adjacent channel leakage power; cascaded MESFETs; output power; power added efficiency; variable gain linear power amplifier MMIC; FETs; Gain control; Gallium arsenide; MESFETs; MMICs; Packaging; Power amplifiers; Power generation; Radio transmitters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596568
