DocumentCode :
2468282
Title :
Simulation of temperature effects on GaAs MESFET based on physical model
Author :
Zhang, Chao ; Fu, Guicui ; Gu, Hantian ; Zhang, Dong
Author_Institution :
Sch. of Reliability & Syst. Eng., Beihang Univ., Beijing, China
fYear :
2012
fDate :
23-25 May 2012
Firstpage :
1
Lastpage :
6
Abstract :
The Prognostics and Health Management (PHM) system for radar equipment is paid more and more attention by researchers in recent years. Owing to its high reliability and performance, the Active Phased Array Radar (APAR) has been playing an increasingly important role in the modern radar field which is composed of thousands of solid-state Transmit/Receive (T/R) modules. As the power source of the T/R module, gallium arsenide metal-semiconductor field effect transistor (GaAs MESFET) has been widely used due to its higher electron mobility, operating frequency, power-added efficiency and lower noise figures than silicon MOSFET. However, the performance of GaAs MESFET is influenced by its operating temperature significantly. In order to achieve effective fault injection for the PHM system, it´s necessary to get temperature effects on GaAs MESFET. A simplified GaAs MESFET equivalent circuit model based on specific physical properties is proposed and realized on the EDA software. It can help the optimizing of device´s structure and materials´ parameters. What is more, it realizes the performance simulation under varied temperatures, thus the degradation of GaAs MESFET´s output parameters can be predicted by monitoring its temperature.
Keywords :
III-V semiconductors; MESFET integrated circuits; electron mobility; equivalent circuits; gallium arsenide; phased array radar; EDA software; GaAs; GaAs MESFET equivalent circuit model; active phased array radar; electron mobility; fault injection; gallium arsenide metal-semiconductor field effect transistor; noise figure; performance simulation; physical model; physical property; power-added efficiency; prognostics and health management system; radar equipment; solid-state transmit-receive module; temperature effect simulation; temperature monitoring; Gallium arsenide; Logic gates; MESFETs; MMICs; Prognostics and health management; Reactive power; Silicon; EDA simulation; GaAs MESFET; modeling; temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Prognostics and System Health Management (PHM), 2012 IEEE Conference on
Conference_Location :
Beijing
ISSN :
2166-563X
Print_ISBN :
978-1-4577-1909-7
Electronic_ISBN :
2166-563X
Type :
conf
DOI :
10.1109/PHM.2012.6228796
Filename :
6228796
Link To Document :
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