DocumentCode
246832
Title
W-band Silicon dielectric measurement
Author
Seyyed-Esfahlan, Mehdi ; Nemati, M.H. ; Tekin, Ibrahim
Author_Institution
Electron. Eng., Sabanci Univ., Istanbul, Turkey
fYear
2014
fDate
6-11 July 2014
Firstpage
918
Lastpage
919
Abstract
In this paper, a free space based method for measurement of silicon dielectric constant is presented at W band frequencies. The dielectric constant of silicon is calculated using measured phase information of the transmitted signal (S21) through Silicon sheet of 500um thickness. Measured dielectric constant for silicon wafer has numerous fluctuations which come from multiple reflection and diffraction effect due to sharp edges.
Keywords
elemental semiconductors; permittivity measurement; phase measurement; silicon; Si; W-band silicon dielectric constant measurement; diffraction effect; free space based method; multiple reflection effect; phase information measurement; signal transmission; size 500 mum; Antenna measurements; Dielectric constant; Frequency measurement; Permittivity measurement; Reflection; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location
Memphis, TN
ISSN
1522-3965
Print_ISBN
978-1-4799-3538-3
Type
conf
DOI
10.1109/APS.2014.6904787
Filename
6904787
Link To Document