Validation test method of TDDB Physics-of-Failure models

With continual scaling of integrated circuits (ICs), the thickness of gate oxide becomes thinner and thinner and affects the reliability of semiconductor device greatly. Time-dependent dielectric breakdown (TDDB) is one of the most common failure mechanisms of ICs, and TDDB Physics-of-Failure (PoF) model has caused more and more attentions. In order to ascertain the accuracy of the models, the validation test method of TDDB PoF models was investigated here. Firstly TDDB failure mechanisms of SiO₂ gate oxide and several TDDB PoF models were particularized. And reliability characterization methods of TDDB and its correlative parameters were discussed. Then the validation test project of TDDB PoF models was proposed, the basic flow, sample design and machining technique, experimental step and failure detection method, and test data processing method were discussed in detail. Finally, validation test was carried out and the results proved that the validation test method and the test project were effective and available.