Physics based model for C-V characteristic of integrated planar Schottky varactor diode in microwave band

A physics based model for C-V characteristic of integrated planar Schottky varactor diode in the microwave band is presented. The model takes into account the influences of the distribute channel series resistance introduced by the planar structure, the distributed junction capacitance, the junction reverse saturation leakage and the sidewall capacitance on the C-V characteristic, and reveals the dependence of the C-V characteristic on operating frequency. The theory is in good agreement with the experimental results