Title :
Ultrafast electron dynamics and intervalley scattering in GaN
Author :
Sun, C.-K. ; Huang, Y.-L. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In our investigation of GaN, a short optical pulse is used to excite the conduction band electron distribution out of equilibrium. The internal thermalization of the electron gas and equilibration of the electronic and lattice temperature (external thermalization) are subsequently monitored in the time domain using a femtosecond probe pulse. The experiments were performed using a multiple-wavelength femtosecond pump-probe technique
Keywords :
III-V semiconductors; conduction bands; gallium compounds; high-speed optical techniques; optical films; optical pumping; GaN; conduction band electron distribution; electron gas; external thermalization; femtosecond probe pulse; internal thermalization; intervalley scattering; lattice temperature; multiple-wavelength femtosecond pump-probe technique; short optical pulse; time domain; ultrafast electron dynamics; Electrons; Gallium nitride; Lattices; Monitoring; Optical pulses; Optical scattering; Probes; Temperature; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739440
