Ultrafast electron dynamics and intervalley scattering in GaN

Author

Sun, C.-K. ; Huang, Y.-L. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P.

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

21

Abstract

In our investigation of GaN, a short optical pulse is used to excite the conduction band electron distribution out of equilibrium. The internal thermalization of the electron gas and equilibration of the electronic and lattice temperature (external thermalization) are subsequently monitored in the time domain using a femtosecond probe pulse. The experiments were performed using a multiple-wavelength femtosecond pump-probe technique

Keywords

III-V semiconductors; conduction bands; gallium compounds; high-speed optical techniques; optical films; optical pumping; GaN; conduction band electron distribution; electron gas; external thermalization; femtosecond probe pulse; internal thermalization; intervalley scattering; lattice temperature; multiple-wavelength femtosecond pump-probe technique; short optical pulse; time domain; ultrafast electron dynamics; Electrons; Gallium nitride; Lattices; Monitoring; Optical pulses; Optical scattering; Probes; Temperature; Ultrafast electronics; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739440

Filename

739440