Wavelength-division multiplexing vertical-cavity surface emitting laser arrays fabricated by selective area MOCVD growth

Author

Hou, H.Q. ; Choquette, K.D. ; Coltrin, M.E. ; Hammons, B.E. ; Geib, K.M.

Author_Institution

EMCORE Corp., Albuquerque, NM, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

23

Abstract

We report fabrication of a VCSEL array using a selective area growth (SAG) technique by MOVPE. We have used a 2D steady-state finite-difference calculation to model the flux of materials on the masked and exposed areas of an annular-ring array pattern. The thickness and composition enhancements of perfectly-selectively grown InGaAs-GaAs-AlGaAs heterostructures measured from thickness profiler and cathodoluminescence measurements are in an excellent agreement with the modeled results

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical fabrication; optical transmitters; semiconductor laser arrays; surface emitting lasers; wavelength division multiplexing; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs heterostructures; MOCVD growth; VCSEL arrays; annular-ring array pattern; cathodoluminescence measurements; perfectly-selectively grown; thickness profiler; vertical-cavity surface emitting laser; wavelength-division multiplexing; Distributed Bragg reflectors; Indium gallium arsenide; Laboratories; Optical arrays; Surface emitting lasers; Surface waves; Thickness measurement; Vertical cavity surface emitting lasers; Wavelength division multiplexing; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739441

Filename

739441