Title :
Study of Gd-doped CdTe film by XPS sputtering
Author :
Xia, Zhongqiu ; Li, Rongping ; Dong, Haicheng ; Ren, Yuan ; Tian, Lei ; Feng, Song
Author_Institution :
Key Lab. of Semicond. Photovoltaic Technol., Inner Mongolia Univ., Huhhot, China
Abstract :
In this thesis,the Gd-doped CdTe films are prepareted by using the double source vacuum evaporation method,and sputtered by XPS every other 10 seconds,the whole XPS spectra of the Gd-doped CdTe film and the fine XPS spectra of every element characteristic peak are obtained.We analyzed the the films by XPS,we also did the research about the atomic concentration and combined state changes of each element in the growth of thin films.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; gadolinium; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; vacuum deposition; CdTe:Gd; XPS sputtering; atomic concentration; double source vacuum evaporation method; element characteristic peak; thin film growth; time 10 s; Crystals; Educational institutions; Films; Solar power generation; Spectroscopy; Sputtering; Vacuum technology; CdTe film; Gd-doped; XPS sputtering;
Conference_Titel :
Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9172-8
DOI :
10.1109/RSETE.2011.5965799
