DocumentCode
2470452
Title
Novel applications of AlAs oxide to optoelectronic devices
Author
Dupkus, P.D. ; Bond, A.E. ; Choi, W.-J. ; Kobayashi, N.P. ; Kobayashi, J.T. ; Lin, C.K.
Author_Institution
Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Abstract
Summary form only given. We will describe the application of stable AlGaAs oxides as integrable low index optical materials and insulators in VCSEL based OEICs where the oxide serves not only as a current and mode aperture in but as an optical material that can be used to engineer the reflectivity of VCSEL mirrors and the cavity refractive index profile
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; refractive index; semiconductor lasers; surface emitting lasers; AlAs; AlAs oxide optoelectronic devices; AlGaAs; VCSEL based OEICs; VCSEL mirrors; cavity refractive index profile; insulators; integrable low index optical materials; mode aperture; reflectivity; stable AlGaAs oxides; Apertures; Bonding; Crystallization; Gallium nitride; Insulation; Optical devices; Optical materials; Optoelectronic devices; Photonics; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739445
Filename
739445
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