DocumentCode
2470628
Title
Red and infrared semiconductor lasers integrated on GaAs substrate by etching and regrowth
Author
Sun, D. ; Treat, D.W. ; Beernink, K. ; Bringans, R.D. ; Kovacs, G.J.
Author_Institution
Xerox Palo Alto Res. Center, CA, USA
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Firstpage
49
Abstract
We report the use of selective epitaxy to integrate red and infrared (IR) lasers side by side on a GaAs substrate. The integrated dual-beam red-IR lasers are separated by 50 μm and are independently addressable
Keywords
etching; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 50 mum; GaAs; GaAs substrate; etching; independently addressable; infrared semiconductor lasers; integrated dual-beam red-IR lasers; red semiconductor lasers; regrowth; selective epitaxy; Chemical lasers; Gallium arsenide; Laser modes; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Substrates; Waveguide lasers; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739454
Filename
739454
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