DocumentCode
2470701
Title
4E-1 Periodically Poled Transducers Built on Single Crystal Lithium Niobate Layers Bonded onto Silicon
Author
Courjon, E. ; Gachon, D. ; Gauthier-Manuel, L. ; Daniau, W. ; Bodin, N. ; Ballandras, S. ; Hauden, J.
Author_Institution
Inst. FEMTO-ST, Besancon
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
268
Lastpage
271
Abstract
In this paper, we present new results on the development of piezoelectric transducers based on periodically poled ferroelectric domains on lithium niobate bonded on silicon. The fabrication of the periodically poled transducers operating in the range 50-500 MHz has been achieved on a 3" 500 mum thick wafer. These devices have then been bonded on a silicon wafer and thinned to a few ten microns thick. Guided elliptic as well as partially guided longitudinal modes are excited, yielding phase velocity of about 3800 and 7000 m.s-1 respectively. The experimental responses of the tested devices are compared to predicted harmonic admittances, showing a good agreement between both results and allowing for a reliable analysis of the nature of the excited modes.
Keywords
acoustic transducers; ferroelectric devices; lithium compounds; piezoelectric transducers; wafer bonding; LiNbO3; Si; ferroelectric domains; frequency 50 MHz to 500 MHz; guided elliptic modes; guided longitudinal modes; harmonic admittances; periodically poled transducers; piezoelectric transducers; single crystal lithium niobate layers; size 3 mum to 500 mum; wafer bonding; Acoustic transducers; Fabrication; Ferroelectric materials; Frequency; Lithium niobate; Optical resonators; Piezoelectric transducers; Silicon; Testing; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2007. IEEE
Conference_Location
New York, NY
ISSN
1051-0117
Print_ISBN
978-1-4244-1384-3
Electronic_ISBN
1051-0117
Type
conf
DOI
10.1109/ULTSYM.2007.78
Filename
4409651
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