Title :
A 2 μm cutoff 320×240 InGaAs NIR camera
Author :
Ettenberg, M.H. ; Lange, M. ; Sugg, A.R. ; Cohen, M.J. ; Olsen, G.H.
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
Abstract :
We present data on and fabrication techniques for the first 320×240 room temperature InGaAs camera that can image in the NIR from 1.1-2.0 μm
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; optical fabrication; 1.1 to 2 mum; IR detectors; InGaAs; InGaAs NIR camera; fabrication techniques; image sensors; room temperature InGaAs camera; Cameras; Indium gallium arsenide; Indium phosphide; Lasers and electrooptics; Lattices; Multiplexing; Optical materials; Silicon; Spectroscopy; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739465
