Title :
Electrical properties of PECVD SiO/sub x/N/sub y/:H prepared by microwave plasma
Author :
Rabiller, P. ; Blain, S. ; Klemberg-Sapieha, J.E. ; Wertheimer, M.R. ; Yelon, Arthur
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada
Abstract :
Results of an ongoing, long-term study of the permittivity, conductivity, and breakdown of silicon oxynitride (P-SiON) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Different compositions of P-SiON have been studied, ranging from pure nitride to pure oxide. All of the properties investigated are strongly correlated with preparation conditions and with film compositions. It has been found that the complex relative permittivity decreases monotonically from about seven to about four with rising oxygen concentration, suggesting that P-SiON behaves like a completely miscible mixture of Si/sub 3/N/sub 4/ and SiO/sub 2/.<>
Keywords :
CVD coatings; dielectric thin films; electric breakdown of solids; electronic conduction in insulating thin films; hydrogen; permittivity; plasma deposited coatings; silicon compounds; SiO/sub x/N/sub y/:H; breakdown; complex relative permittivity; conductivity; film compositions; microwave plasma; permittivity; plasma enhanced chemical vapor deposition; preparation conditions; Composite materials; Fabrication; Fluid flow; Frequency; Hydrogen; Nitrogen; Permittivity; Plasma properties; Semiconductor films; Silicon;
Conference_Titel :
Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/ELINSL.1988.13890
