Interdiffusion contributions in optimized surface-acoustic-wave quantum-well modulators

Author

Choy, Wallace CH ; Li, E. Herbert ; Weiss, Bernard L.

Author_Institution

Sch. of Electron. Eng., Surrey Univ., Guildford, UK

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

81

Abstract

A theoretical study of an electro-absorption AlGaAs-GaAs DFQW modulator using SAW QW interactions is optimized so that it makes use of both the steeper potential at the device surface for modulation and a low power SAW. Therefore, the fabrication of the interdigital transducer which is used to launch the SAW, can be simplified and the device can be realized more easily. The non-uniform feature of the SAW induced potential is also taken into account in optimizing the device structure

Keywords

III-V semiconductors; acousto-optical modulation; aluminium compounds; chemical interdiffusion; electro-optical modulation; gallium arsenide; semiconductor quantum wells; surface acoustic wave devices; transducers; AlGaAs-GaAs; AlGaAs-GaAs DFQW modulator; SAW QW interactions; SAW induced potential; device structure optimisation; device surface; electro-absorption; interdiffusion contributions; interdigital transducer; low power SAW; optimized surface-acoustic-wave quantum-well modulators; theoretical study; Gallium arsenide; Optical materials; Optical modulation; Optical propagation; Optical refraction; Optical signal processing; Optical surface waves; Optical variables control; Quantum wells; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739470

Filename

739470