DocumentCode
2470953
Title
The direct extraction of the model parameters for the high-speed low-threshold semiconductor laser
Author
Jianjun, Gao ; Baoxin, Gao ; Chunguang, Liang
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
1997
fDate
2-5 Dec 1997
Firstpage
569
Abstract
A new method which directly extracts the model parameters for the high-speed low-threshold semiconductor laser is presented. Only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used and it is not necessary to fit the intensity modulation frequency response or the relative noise intensity response thus avoiding the effect of optical feedback
Keywords
equivalent circuits; laser theory; semiconductor device models; semiconductor lasers; direct extraction; high-speed semiconductor laser; low-threshold semiconductor laser; model parameters; relaxation oscillation frequency characteristics; terminal impedance characteristics; Frequency response; Impedance; Intensity modulation; Laser feedback; Laser modes; Laser noise; Optical feedback; Optical noise; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.654605
Filename
654605
Link To Document