Title :
Reverse-mesa ridge waveguide long wavelength AlGaInAs-InP multiple quantum well lasers
Author :
Qian, Yi ; Lu, Hanh ; Burroughs, Scott
Author_Institution :
Lasertron Inc., Bedford, MA, USA
Abstract :
Summary form only given. Reverse-mesa ridge waveguide lasers have been fabricated based on AlGaInAs multiple quantum well active region at 1550 nm wavelength and high performance CW operation has been demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared sources; quantum well lasers; ridge waveguides; waveguide lasers; 1550 nm; AlGaInAs multiple quantum well active region; AlGaInAs-InP; AlGaInAs-InP multiple quantum well lasers; high performance CW operation; long wavelength; reverse-mesa ridge waveguide lasers; Diode lasers; Indium phosphide; Performance gain; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Temperature distribution; Thermal resistance; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739481
