Title :
1.59 μm lattice-matched AlGaInAs-InGaAs-InP lasers with digital alloy barrier and waveguide layers
Author :
Liu, G.T. ; Stintz, A. ; Pease, E.A. ; Newell, T.C. ; Malloy, K.J. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We present the first lattice-matched InGaAs quantum well lasers with barriers and waveguide grown using a digital alloy MBE technique. By rapidly switching the ternaries of AlInAs and InGaAs, the digital alloy process permits the growth of any quaternary AlGaInAs composition
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; waveguide lasers; 1.59 mum; AlGaInAs-InGaAs-InP; digital alloy MBE technique; digital alloy barrier; digital alloy process; lattice-matched AlGaInAs/InGaAs/InP lasers; lattice-matched InGaAs quantum well lasers; quaternary AlGaInAs composition; waveguide layers; Chemical lasers; Digital alloys; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Optical waveguides; Quantum well lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739483
