DocumentCode :
2471195
Title :
The effect of temperature on the color temperature of GaN-based LED
Author :
Weiguo Li ; Weiling Guo ; Xinwei Xu ; Desheng Cui
Author_Institution :
KEY Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China
fYear :
2011
fDate :
24-26 June 2011
Firstpage :
6468
Lastpage :
6471
Abstract :
In this paper, two kinds of GaN-based light emitting diodes (LED) with difference in color temperature were tested under the temperature range from 283K to 353K and current of 350mA.The samples were fabricated with the same blue-ray chip but coated by different yttrium aluminum garnet (YAG) phosphor. After analyzing the PL spectrum, the result shows that the color temperature of LED increases while temperature raising, what´s more, the cool-color-temperature LED increases more. It also proves that the color temperature of GaN-based write LED has relation to the proportion of blue ray radiant flux.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; phosphors; photoluminescence; wide band gap semiconductors; yttrium compounds; GaN-YAG; blue ray radiant flux; blue-ray chip; cool-color-temperature LED; current 350 mA; light emitting diodes; photoluminescence spectra; temperature 283 K to 353 K; yttrium aluminum garnet phosphor; Color; Gallium nitride; Junctions; Light emitting diodes; Phosphors; Temperature distribution; YAG phosphor; color temperature; light emitting diode; red shift;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9172-8
Type :
conf
DOI :
10.1109/RSETE.2011.5965838
Filename :
5965838
Link To Document :
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