Parametric analysis of AlAs wet oxidation process for application in VCSELs

Author

Koley, B. ; Wasiczko, L. ; Whaley, R., Jr. ; Johnson, F.G. ; Simonis, G. ; Dagenais, M.

Author_Institution

Maryland Univ., College Park, MD, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

112

Abstract

The selective nature of wet oxidation of high Al content AlGaAs has been successfully employed in the fabrication of various highly efficient, low-threshold-current vertical cavity surface emitting laser (VCSEL) structures. For this technology to be used in batch manufacturing in a predictable way, a thorough understanding of the oxidation process is required. We describe a study on the kinetics of oxidation. We, for the first time, report our studies on the dependence of wet oxidation process on important process parameters like water bubbler temperature and N₂ gas flow rate

Keywords

III-V semiconductors; aluminium compounds; optical fabrication; oxidation; semiconductor lasers; semiconductor technology; surface emitting lasers; AlAs; AlAs wet oxidation process; AlGaAs; N₂ gas flow rate; VCSELs; low-threshold-current vertical cavity surface emitting laser; oxidation kinetics; parametric analysis; process parameters; water bubbler temperature; Fluid flow; Furnaces; Kinetic theory; Laboratories; Manufacturing processes; Optical device fabrication; Oxidation; Surface emitting lasers; Temperature dependence; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739486

Filename

739486