Title :
Selective oxidation of AlxIn1-xAs as grown on InP and its application to long wavelength lasers
Author :
Iwai, N. ; Mukaihara, T. ; Itoh, M. ; Yamanaka, N. ; Arakawa, S. ; Shimizu, H. ; Kasukawa, A.
Author_Institution :
Res. & Dev. Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We have investigated oxidation rate of an AlInAs layer grown on InP substrate. It is found that oxidation rate in AlxIn1-xAs layer increases with temperature and layer thickness, and shows no dependence on Al-content in the range of 0.48 (lattice-match) to 0.7. The electrical characteristics of 50 nm-thick AlInAs-oxide shows good current blocking for laser application. The optimum temperature was found to be around 500°C, taking oxidation rate and surface morphology into account. AlInAs-oxide confined inner stripe laser (ACIS) is fabricated for the first time
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; 50 nm; 500 C; AlxIn1-xAs; AlxIn1-xAs layer; AlInAs; AlInAs layer; AlInAs-oxide confined inner stripe laser fabrication; InP; InP substrate; current blocking; laser application; layer thickness; long wavelength lasers; oxidation rate; selective oxidation; surface morphology; Artificial intelligence; Chemicals; Electric variables; Indium phosphide; Laser applications; Optical device fabrication; Oxidation; Surface morphology; Temperature dependence; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739489
