Title :
Antimonide-based approaches for long-wavelength VCSELs
Author :
Klem, John F. ; Blum, Olga ; Lear, Kevin
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We demonstrate an optically-pumped all-epitaxial 1.56 μm VCSEL on an InP substrate which combined a simple InGaAs active region with AlAsSb-AlGaAsSb mirror stacks. The AlGaAsSb material system is well-suited for fabrication of high-reflectivity DBRs due to a significantly higher refractive index contrast than achievable using InAlGaAsP, particularly at 1.55 μm
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; laser transitions; optical pumping; reflectivity; semiconductor lasers; surface emitting lasers; 1.55 mum; 1.56 mum; AlAsSb-AlGaAsSb; AlAsSb-AlGaAsSb mirror stacks; AlGaAsSb; AlGaAsSb material system; InGaAs active region; InP substrate; antimonide-based approaches; high-reflectivity DBRs; long-wavelength VCSELs; optically-pumped all-epitaxial 1.56 μm VCSEL; refractive index contrast; Dielectric substrates; Distributed Bragg reflectors; Electric resistance; Electrical resistance measurement; Laboratories; Lattices; Mirrors; Optical materials; Refractive index; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739495
