• DocumentCode
    2471503
  • Title

    The zen of nonvolatile memories

  • Author

    Prinz, Erwin J.

  • Author_Institution
    Freescale Semicond., Inc., Austin, TX
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    815
  • Lastpage
    820
  • Abstract
    Silicon technology based nonvolatile memories (NVM) have achieved widespread adoption for code and data storage applications. In the last 30 years, the traditional floating gate bitcell has been scaled following Moore´s law, but recently scaling limits have been encountered which will require alternative solutions after the 65 nm technology node. Both evolutionary and novel solutions are being pursued in the industry. While the traditional floating gate technology will scale to the 65 nm node, novel device structures and array architectures will be needed past that node
  • Keywords
    integrated circuit reliability; nanotechnology; random-access storage; silicon; Moore law; code storage; data storage; floating gate bitcell; floating gate technology; nonvolatile memories; scaling limits; silicon technology; Integrated circuit technology; Microcontrollers; Moore´s Law; Nonvolatile memory; Permission; Random access memory; Read-write memory; Silicon; System-on-a-chip; Very large scale integration; Design; Experimentation; FeRAM; MRAM; Measurement; Nonvolatile memories; Reliability; SONOS; Security; floating gate; nanocrystal; phase change memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2006 43rd ACM/IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    0738-100X
  • Print_ISBN
    1-59593-381-6
  • Type

    conf

  • DOI
    10.1109/DAC.2006.229232
  • Filename
    1688909