DocumentCode
2471503
Title
The zen of nonvolatile memories
Author
Prinz, Erwin J.
Author_Institution
Freescale Semicond., Inc., Austin, TX
fYear
0
fDate
0-0 0
Firstpage
815
Lastpage
820
Abstract
Silicon technology based nonvolatile memories (NVM) have achieved widespread adoption for code and data storage applications. In the last 30 years, the traditional floating gate bitcell has been scaled following Moore´s law, but recently scaling limits have been encountered which will require alternative solutions after the 65 nm technology node. Both evolutionary and novel solutions are being pursued in the industry. While the traditional floating gate technology will scale to the 65 nm node, novel device structures and array architectures will be needed past that node
Keywords
integrated circuit reliability; nanotechnology; random-access storage; silicon; Moore law; code storage; data storage; floating gate bitcell; floating gate technology; nonvolatile memories; scaling limits; silicon technology; Integrated circuit technology; Microcontrollers; Moore´s Law; Nonvolatile memory; Permission; Random access memory; Read-write memory; Silicon; System-on-a-chip; Very large scale integration; Design; Experimentation; FeRAM; MRAM; Measurement; Nonvolatile memories; Reliability; SONOS; Security; floating gate; nanocrystal; phase change memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2006 43rd ACM/IEEE
Conference_Location
San Francisco, CA
ISSN
0738-100X
Print_ISBN
1-59593-381-6
Type
conf
DOI
10.1109/DAC.2006.229232
Filename
1688909
Link To Document