Title :
The XPS research of Dy-doped ZnSe thin films
Author :
Ren, Yuan ; Li, Rongping ; Wu, Rong ; Xia, Zhongqiu ; Feng, Song ; Tian, Lei
Author_Institution :
Key Lab. of Semicond. Photovoltaic Technol., Inner Mongolia Univ., Huhhot, China
Abstract :
ZnSe thin films are prepared by vacuum evaporation on glass substrate and Dy-doped by double-source evaporation. Dy doping did not change the sample´s crystal structure but can increase its grain size and roughness. Analysing the XPS spectrum, doping change the chemic states of the main ingredient, use this verdict with other results to study the influence by the Dy-doping.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; crystal structure; dysprosium; grain size; semiconductor doping; semiconductor growth; semiconductor thin films; surface roughness; vacuum deposition; zinc compounds; XPS spectrum; ZnSe:Dy; chemic states; crystal structure; double-source evaporation; dysprosium doping; glass substrate; grain size; roughness; thin films; vacuum evaporation; Crystals; Doping; Educational institutions; Optical films; Optical materials; Zinc oxide; Dy doping; XPS; ZnSe thin films;
Conference_Titel :
Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9172-8
DOI :
10.1109/RSETE.2011.5965859
