Title :
Tunable narrow linewidth distributed Bragg reflector lasers
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We present details of the fabrication and characterization of laser structures, including measurements of the laser emission linewidth and DBR tuning range. Similar results on long wavelength InGaAsP-InP DBR lasers with first-order gratings will be described
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; quantum well lasers; spectroscopic light sources; DBR tuning range; InGaAsP-InP; first-order gratings; laser emission linewidth; laser structure fabrication; long wavelength InGaAsP-InP DBR lasers; tunable narrow linewidth distributed Bragg reflector lasers; Distributed Bragg reflectors; Epitaxial growth; Etching; Gallium arsenide; Gratings; Optical device fabrication; Optical waveguides; Semiconductor lasers; Tunable circuits and devices; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739509
