Title :
Low-dark-current pin photodiodes using as-grown Ge with an i-Si insertion layer: Mechanism of dark current suppression
Author :
Ishikawa, Yasuhiko ; Park, Sungbong ; Osaka, Jiro ; Wada, Kazumi
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Low dark current of ~10 mA/cm2 by inserting i-Si in as-grown Ge pin photodiodes is dominated by the carrier generation in wider-gap i-Si. This property is useful for photodiode applications of defective Ge prepared at low temperatures.
Keywords :
Fermi level; dark conductivity; elemental semiconductors; germanium; p-i-n photodiodes; silicon; Fermi level pinning; Si-Ge; carrier generation; dark current suppression; insertion layer; pin photodiodes; Annealing; Current measurement; Dark current; Electrons; Etching; Fabrication; Intersymbol interference; PIN photodiodes; Photonic band gap; Temperature dependence;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338303
