Title :
High-speed RPCVD Ge waveguide photodetector
Author :
Suh, Dongwoo ; Joo, Jiho ; Kim, Sanghoon ; Kim, Gyungock
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We report high-speed waveguide photodetectors with RPCVD-grown Ge on SOI. The device exhibits a 3 dB bandwidth of ~50 GHz, a responsivity of 0.8 A/W, and a low dark current of 35 nA at lambda ~ 1.55 mum.
Keywords :
dark conductivity; elemental semiconductors; germanium; optical waveguides; photodetectors; semiconductor epitaxial layers; Ge; RPCVD; SOI; current 35 nA; dark current; epilayer; high-speed waveguide photodetectors; reduced pressure chemical vapor deposition; responsivity; Absorption; Bandwidth; Dark current; Optical coupling; Optical devices; Optical waveguides; Photodetectors; Photonics; Semiconductor waveguides; Silicon;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338306
