European HELIOS project: Silicon photonic photodetector integration

Author

Vivien, L. ; Osmond, J. ; Marris-Morini, D. ; Crozat, P. ; Cassan, E. ; Fédéli, J-M ; Brision, S. ; Damlencourt, J.F. ; Mazzochi, V. ; Van Thourhout, D. ; Brouckaert, J.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-sud XI, Orsay, France

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

10

Lastpage

12

Abstract

We report recent experimental results of two kinds of photodetectors developed in the framework of the European project HELIOS: InAlAs-InGaAs metal-semiconductor-metal photodetectors and germanium photodetectors.

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; elemental semiconductors; gallium arsenide; germanium; indium compounds; integrated optics; metal-semiconductor-metal structures; optical waveguides; photodetectors; photodiodes; silicon-on-insulator; Ge; HELIOS; InAlAs-InGaAs; dark current; data transmission; germanium photodetectors; metal-semiconductor-metal photodetectors; photodiode; responsivity; silicon-on-insulator waveguides; Germanium; High speed optical techniques; III-V semiconductor materials; Integrated optics; Optical device fabrication; Optical interconnections; Optical waveguides; Photodetectors; Photonic integrated circuits; Silicon; InGaAs; germanium; integrated optics; microphotonics; photodetector; silicon-on-insulator; waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338308

Filename

5338308