Luminescence properties of ErxY2−xSiO5 thin film prepared by sol-gel method

Er_xY_2-xSiO₅ (x=0.1~2) crystalline thin films with the same structure of Er₂SiO₅ crystal are demonstrated. Er_xY_2-xSiO₅ films with various x values were prepared by the sol-gel method. Er_xY_2-xSiO₅ films show a highly-ordered crystalline structure still for x~0.1. With decreasing the Er content, the photoluminescence intensity was almost constant till x~0.5, and then increased strongly for x below 0.5. The PL decay time also strongly depends on x value. With decreasing x, the decay time becomes longer and becomes 500 us at x=0.1. The decay time quenching is in agreement with PL efficiency. Here we discuss the decay time quenching in Er_xY_2-xSiO₅ crystalline system.