DocumentCode
2471895
Title
6F-1 Trench-Isolated CMUT Arrays with a Supporting Frame: Characterization and Imaging Results
Author
Zhuang, Xuefeng ; Wygant, Ira O. ; Lin, Der-Song ; Kupnik, Mario ; Oralkan, Ömer ; Khuri-Yakub, Butrus T.
Author_Institution
Stanford Univ., Stanford
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
507
Lastpage
510
Abstract
We report on the characterization and imaging results of trench-isolated CMUT arrays with a supporting frame. The CMUT arrays are built on a silicon-on-insulator (SOI) wafer using direct wafer-to-wafer fusion bonding technique. Electrical contacts to individual elements are brought to the back side of the wafer by highly conductive silicon pillars. Mechanical support for array elements is provided by a silicon frame structure. 1D and 2D arrays with 250-mum element pitch were fabricated and tested in air and in immersion. Rectangular membranes are used, which feature two distinctive pull-in (collapse) points in both air and immersion tests. The double collapsing membranes enable an operating frequency ranging from 1.9 MHz in conventional mode to 58 MHz in second collapse mode on the same device. After flip-chip bonding the 2D arrays to custom-designed integrated circuits (IC), volumetric imaging was demonstrated.
Keywords
capacitors; flip-chip devices; micromechanical devices; silicon-on-insulator; ultrasonic imaging; ultrasonic transducer arrays; wafer bonding; 1D CMUT array; 2D CMUT array; SOI wafer; array element mechanical support; capacitive micromachined ultrasonic transducer; direct wafer-wafer fusion bonding technique; double collapsing membrane; flip chip bonding; frequency 1.9 MHz to 58 MHz; rectangular membrane; second collapse mode; silicon on insulator wafer; size 250 mum; trench isolated CMUT array; volumetric imaging; Biomembranes; Circuit testing; Contacts; Electrodes; Fabrication; Frequency; Integrated circuit interconnections; Laboratories; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2007. IEEE
Conference_Location
New York, NY
ISSN
1051-0117
Print_ISBN
978-1-4244-1384-3
Electronic_ISBN
1051-0117
Type
conf
DOI
10.1109/ULTSYM.2007.134
Filename
4409707
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